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HAT2171H
Silicon N Channel Power MOS FET Power Switching
REJ03G0131-0400 Rev.4.00 Sep 20, 2005
Features
* * * * * High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5 D 5 4 4 G 1, 2, 3 Source 4 Gate 5 Drain SSS 123
3 12
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg
Note1
Ratings 40 20 40 160 40 25 50 25 5.0 150 -55 to +150
Unit V V A A A A mJ W C/W C C
Rev.4.00 Sep 20, 2005 page 1 of 7
HAT2171H
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 20 -- -- 1.5 -- -- 30 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 3.8 4.4 50 3750 760 230 0.5 52 15 6 14 30 41 5.5 0.82 38 Max -- -- 10 1 3.0 4.8 6.0 -- -- -- -- -- -- -- -- -- -- -- -- 1.07 -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 20 A, VGS = 10 V Note4 ID = 20 A, VGS = 7 V Note4 ID = 20 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, VGS = 10 V, ID = 40 A VGS = 10 V, ID = 20 A, VDD 10 V, RL = 0.5 , Rg = 4.7 IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/ dt = 100 A/ s
Rev.4.00 Sep 20, 2005 page 2 of 7
HAT2171H
Main Characteristics
Power vs. Temperature Derating
40 500 100
DC Op
Maximum Safe Operation Area
Pch (W)
ID (A)
30
PW
era
Channel Dissipation
10
=1
1m
0m
c=
10
s
10 s 0 s
tio
20
Drain Current
nT
s
25 C
10
1 Operation in this area is limited by RDS(on) 0.1 0.01 0.1 Ta = 25C 1 shot Pulse 0.3 1 3
0
50
100
150
200
10
30
100
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 10 V 4V 50 3.8 V Pulse Test 3.6 V
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
30
ID (A) Drain Current
40
40
30 3.4 V
Drain Current
20
20 Tc = 75C 10 25C -25C 0
10
3.2 V
VGS = 3 V
0
2
4
6
8
10
2
4
6
8
10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage 250
Pulse Test
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) (m)
Drain to Source Voltage VDS(on) (mV)
100
Pulse Test
200 150 100 50
30 10 3 1 0.3 0.1 1 3 10 30 100 300 1000 ID (A) Drain Current
VGS = 7 V 10 V
ID = 20 A 10 A 5A
0
4
8
12
16
20
Gate to Source Voltage
VGS (V)
Rev.4.00 Sep 20, 2005 page 3 of 7
HAT2171H
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
10 Pulse Test 8 ID = 5 A, 10 A 6 VGS = 7 V 4 10 V 2 -25 0 25 50 75 100 125 150 5 A, 10 A, 20 A 20 A 1000 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 VDS = 10 V Pulse Test 10 30 100 25C Tc = -25C
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
75C
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 Ciss 3000 1000 300 Crss 100 30 10 100 0 5 10 15 20
Body-Drain Diode Reverse Recovery Time
100
Reverse Recovery Time trr (ns)
50
Capacitance C (pF)
Coss
20 di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30
10 0.1
VGS = 0 f = 1 MHz 25 30
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 40 A VDD = 25 V 10 V 5V VDS VGS
Switching Characteristics
VGS (V)
20 1000 300 100 td(off) 30 10 3 tr VGS = 10 V, VDS = 10 V Rg = 4.7 , duty 1 % 2 5 10 20 50 100 td(on) tf
50
Drain to Source Voltage
30
12
20
8
10
VDD = 25 V 10 V 5V 20 40 60 80
4 0 100
Gate to Source Voltage
Switching Time t (ns)
40
16
0
0.1 0.2 0.5 1
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.4.00 Sep 20, 2005 page 4 of 7
HAT2171H
Reverse Drain Current vs. Source to Drain Voltage
50
(mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating
100 IAP = 25 A VDD = 15 V duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
40 10 V 30 5V VGS = 0
Repetitive Avalanche Energy EAR
80
60
20
40
10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
20 0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
0.02
ch - c(t) = s (t) * ch - c ch - c = 5.0C/ W, Tc = 25C PDM
1
1 o sh tp uls e
0.03
0.0
D= PW T
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform 1 2 VDSS VDSS - VDD V(BR)DSS IAP VDD VDS
VDS Monitor
L IAP Monitor
EAR =
L * IAP2 *
Rg
D. U. T
ID
Vin 15 V 50 0 VDD
Rev.4.00 Sep 20, 2005 page 5 of 7
HAT2171H
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V 90% td(on) tr 90% td(off) tf Vin Vout Vin 10 V 10% 10% 10% Vout Monitor
Switching Time Waveform
90%
Rev.4.00 Sep 20, 2005 page 6 of 7
HAT2171H
Package Dimensions
JEITA Package Code
SC-100
RENESAS Code
PTZZ0005DA-A
Package Name LFPAK
MASS[Typ.] 0.080g
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
0.20 -0.03
+0.05
(Ni/Pd/Au plating)
Ordering Information
Part Name HAT2171H-EL-E Quantity 2500 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Sep 20, 2005 page 7 of 7
4.2
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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